Diodes ZXTN2005G - Manual (Page 2)

ZXTN2005G
S E M I C O N D U C T O R S
ISSUE 3 - MAY 2006
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
(a)
R ⍜JA 42 °C/W
Junction to ambient
(b)
R ⍜JA 78 °C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
60 V
Collector-emitter voltage BV
CEO
25 V
Emitter-base voltage BV
EBO
7 V
Continuous collector current I
C
7 A
Peak pulse current I
CM
20 A
Power dissipation at T
A
=25°C (a)
Linear derating factor
P
D
3.0
24
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS