Diodes ZXTN2005G - Manual (Page 4)

ZXTN2005G
S E M I C O N D U C T O R S
ISSUE 3 - MAY 2006
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
60 120 V I
C
=100 ␮A
Collector-emitter breakdown voltage BV
CER
60 120 V I
C
=1 ␮A, RBՅ1k⍀
Collector-emitter breakdown voltage BV
CEO
25 35 V I
C
=10mA*
Emitter-base breakdown voltage BV
EBO
7 8.1 V I
E
=100 ␮A
Collector cut-off current I
CBO
50
0.5
nA
␮A
V
CB
=50V
V
CB
=50V, T
amb
=100 ЊC
Collector cut-off current I
CER
R Յ1k⍀
100
0.5
nA
␮A
V
CB
=50V
V
CB
=50V, T
amb
=100 ЊC
Emitter cut-off current I
EBO
10 nA V
EB
=6V
Collector-emitter saturation voltage V
CE(SAT)
28
35
55
115
195
40
50
75
140
230
mV
mV
mV
mV
mV
I
C
=500mA, I
B
=10mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=6.5A, I
B
=150mA*
Base-emitter saturation voltage V
BE(SAT)
980 1080 mV I
C
=6.5A, I
B
=150mA*
Base-emitter turn-on voltage V
BE(ON)
890 980 mV I
C
=6.5A, V
CE
=1V*
Static forward current transfer ratio h
FE
300
300
200
40
400
450
275
55
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=1V*
Transition frequency f
T
150 I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance C
OBO
48 pF V
CB
=10V, f=1MHz*
Switching times t
ON
t
OFF
33
464
ns I
C
=1A, V
CC
=10V,
I
B1
=-I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.