Diodes ZXTN25012EFH - Manual (Page 2)

ZXTN25012EFH
Issue 3 - March 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
20 V
Collector-emitter voltage V
CEO
12 V
Emitter-collector voltage (reverse blocking) V
ECX
6 V
Emitter-base voltage V
EBO
7 V
Continuous collector current
(c) I
C
6 A
Base current I
B
1 A
Peak pulse current I
CM
15 A
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
P
D
0.73
5.84 W
mW/°C
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
P
D
1.05
8.4
W
mW/°C
Power dissipation at T
amb
=25°C
(c)
Linear derating factor
P
D
1.25
9.6
W
mW/°C
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
P
D
1.81
14.5 W
mW/°C
Operating and storage temperature range T
j
, T
stg
- 55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a) R ⍜JA 171 °C/W
Junction to ambient
(b) R ⍜JA 119 °C/W
Junction to ambient
(c) R
⍜JA
100 °C/W
Junction to ambient
(d) R ⍜JA 69 °C/W