Absolute maximum ratings, Thermal resistance – Diodes ZXTN25012EFH User Manual

Page 2

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ZXTN25012EFH

Issue 3 - March 2008

2

www.zetex.com

© Zetex Semiconductors plc 2008

Absolute maximum ratings

NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.

(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.

Parameter

Symbol

Limit

Unit

Collector-base voltage

V

CBO

20

V

Collector-emitter voltage

V

CEO

12

V

Emitter-collector voltage (reverse blocking)

V

ECX

6

V

Emitter-base voltage

V

EBO

7

V

Continuous collector current

(c)

I

C

6

A

Base current

I

B

1

A

Peak pulse current

I

CM

15

A

Power dissipation at T

amb

=25°C

(a)

Linear derating factor

P

D

0.73
5.84

W

mW/°C

Power dissipation at T

amb

=25°C

(b)

Linear derating factor

P

D

1.05

8.4

W

mW/°C

Power dissipation at T

amb

=25°C

(c)

Linear derating factor

P

D

1.25

9.6

W

mW/°C

Power dissipation at T

amb

=25°C

(d)

Linear derating factor

P

D

1.81
14.5

W

mW/°C

Operating and storage temperature range

T

j

, T

stg

- 55 to 150

°C

Thermal resistance

Parameter

Symbol

Limit

Unit

Junction to ambient

(a)

R

⍜JA

171

°C/W

Junction to ambient

(b)

R

⍜JA

119

°C/W

Junction to ambient

(c)

R

⍜JA

100

°C/W

Junction to ambient

(d)

R

⍜JA

69

°C/W

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