Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25012EFH User Manual
Page 4
ZXTN25012EFH
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BV
CBO
20
40
V
I
C
= 100
A
Collector-emitter breakdown
voltage (base open)
BV
CEO
12
17
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8.0
V
I
E
= 100
A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
4.5
5.5
V
I
E
= 100
A,
Collector-base cut-off current I
CBO
<1
50
0.5
nA
A
V
CB
= 20V
V
CB
= 20V, T
amb
= 100°C
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
28
32
mV
I
C
= 1A, I
B
= 100mA
45
55
mV
I
C
= 1A, I
B
= 10mA
60
75
mV
I
C
= 2A, I
B
= 40mA
160
190
mV
I
C
= 6A, I
B
= 120mA
Base-emitter saturation
voltage
V
BE(sat)
920
1000
mV
I
C
= 6A, I
B
= 120mA
Base-emitter turn-on voltage
V
BE(on)
800
900
mV
I
C
= 6A, V
CE
= 2V
Static forward current
transfer ratio
h
FE
500
800
1500
I
C
= 10mA, V
CE
500
750
I
C
= 1A, V
CE
= 2V
300
460
I
C
= 4A, V
CE
= 2V
40
55
I
C
= 15A, V
CE
= 2V
Transition frequency
f
T
260
MHz I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance
C
OBO
25.6
35
pF
V
CB
= 10V, f
Delay time
t
d
70.9
ns
V
CC
= 10V.
I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time
t
r
69.8
ns
Storage time
t
s
233
ns
Fall time
t
f
71.6
ns