Diodes ZXTN25012EFL - Manual

Issue 2 - January 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTN25012EFL
12V, SOT23, NPN low power transistor
Summary
BV
CEO
> 12V
BV
ECO
> 4.5V
h
FE
> 500
I
C(cont)
= 2A
V
CE(sat)
< 65 mV @ 1A
R
CE(sat)
= 46 m
⍀
P
D
= 350mW
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
• High peak current
• Low saturation voltage
• 6V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC-DC conversion
• LED driving
• Interface between low voltage IC's and load
Ordering information
Device marking
1B6
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTN25012EFLTA 7 8 3000
C
E
B
C
E
B
Pinout - top view