Diodes ZXTN25012EFL - Manual (Page 2)

ZXTN25012EFL
Issue 2 - January 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
20 V
Collector-emitter voltage V
CEO
12 V
Emitter-collector voltage V
ECO
4.5 V
Emitter-base voltage V
EBO
7 V
Continuous collector current (a) I
C
2 A
Base current I
B
500 mA
Peak pulse current I
CM
15 A
Power dissipation @ T
amb
=25°C (a) P
D
350 mW
Linear derating factor 2.8 mW/°C
Operating and storage temperature range T
j
, T
stg
- 55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R ⍜JA 357 °C/W