Diodes ZXT10N50DE6 - Manual (Page 2)

ISSUE 1 - SEPTEMBER 2000
ZXT10N50DE6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R θ
JA
113 °C/W
Junction to Ambient (b) R θ
JA
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
6 A
Continuous Collector Current I
C
3 A
Base Current I
B
500 mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1.1
8.8 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C