Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXT10N50DE6 User Manual
Page 4
ISSUE 1 - SEPTEMBER 2000
ZXT10N50DE6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50
190
V
I
C
=100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
50
65
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
8.3
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=40V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector Emitter Cut-Off Current
I
CES
100
nA
V
CES
=40V
Collector-Emitter Saturation
Voltage
V
CE(sat)
14
145
115
225
20
200
200
300
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.93
1.0
V
I
C
=3A, I
B
=100mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.88
0.95
V
I
C
=3A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
200
100
400
450
400
225
40
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
100
165
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
12
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
170
ns
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=10mA
Turn-Off Time
t
(off)
750
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
4