Diodes ZDT6702 - Manual

SM-8 COMPLEMENTARY MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 – February 1997
PARTMARKING DETAIL – T6702
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPN PNP UNIT
Collector-Base Voltage V
CBO
80 -80 V
Collector-Emitter Voltage V
CEO
60 -60 V
Emitter-Base Voltage V
EBO
10 -10 V
Peak Pulse Current I
CM
4 -4 A
Continuous Collector Current I
C
1.75 -1.75 A
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
P
tot
2.25
2.75
W
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT6702
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
NPN
PNP
SM-8
(8 LEAD SOT223)