Zdt6702, Npn transistor electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZDT6702 User Manual
Page 2
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
200
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
60
100
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
15
V
I
E
=100
µ
A
Collector Cutoff
Current
I
CBO
0.5
10
10
nA
µ
A
V
CB
=60V
V
CB
=60V,
T
amb
=100°C
Emitter Cutoff Current I
EBO
0.1
10
nA
V
EB
=8V
Colllector-Emitter
Cutoff Current
I
CES
50
500
nA
V
CE
=60V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.83
1.0
0.95
1.28
V
V
I
C
=0.5A, I
B
=0.5mA*
I
C
=1.75A, I
B
=2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.68
1.85
V
I
C
=1.75A, I
B
=2mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.55
1.75
V
I
C
=1.75A, V
CE
=5V*
Static Forward
Current Transfer Ratio
h
FE
5K
5K
3.5K
0.5K
13K
13K
9K
2K
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=4A, V
CE
=5V*
Transition Frequency
f
T
140
MHz
I
C
=100mA, V
CE
=10V
f=100MHz
Input Capacitance
C
ibo
70
pF
V
EB
=500mV, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
0.5
µ
s
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
2.1
µ
s
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZDT6702