Diodes ZX5T851G - Manual (Page 2)

ZX5T851G
Document Number DS33421 Rev. 3 - 2
2 of 7
www.diodes.com
January 2013
© Diodes Incorporated
ZX5T851G
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
150 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I
C
6 A
Peak Pulse Current I
CM
20 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear derating factor
(Note 5)
P
D
3.0
24 W
mW /°C
(Note 6)
1.6
12.8
Thermal Resistance, Junction to Ambient
(Note 5) R
θJA
42
°C/W (Note 6) R
θJA
78
Thermal Resistance Junction to Lead (Note 7) R
θJL
10.48
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is surface mounted on 25mm x 25mm with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.