Electrical characteristics, Zx5t851g, A product line of diodes incorporated – Diodes ZX5T851G User Manual
Page 4
ZX5T851G
Document Number DS33421 Rev. 3 - 2
4 of 7
January 2013
© Diodes Incorporated
ZX5T851G
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
150 190
−
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CER
150 190
−
V
I
C
= -1µA, R
B
≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
60 80
−
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1
−
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
−
−
<1
−
20
0.5
nA
µA
V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
Collector Cut-off Current
I
CER
R
B
≤ 1kΩ
−
−
<1
−
20
0.5
nA
µA
V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
Emitter Cut-off Current
I
EBO
−
<1 10 nA
V
EB
= 6V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
−
20
30
mV
I
C
= 100mA, I
B
= 5mA
−
45 60
I
C
= 1A, I
B
= 100mA
−
50 70
I
C
= 1A, I
B
= 50mA
−
100 135
I
C
= 2A, I
B
= 50mA
−
210 260
I
C
= 6A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
−
1000
1100 mV
I
C
= 6A, I
B
= 300mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
−
940 1050 mV I
C
= 6A, V
CE
= 1V
DC Current Gain (Note 9)
h
FE
100 200
−
−
I
C
= 10mA, V
CE
= 1V
100 200 300
I
C
= 2A, V
CE
= 1V
55 105
−
I
C
= 5A, V
CE
= 1V
20 40
−
I
C
= 10A, V
CE
= 1V
Output Capacitance
C
obo
- 31 - pF
V
CB
= 10V. f = 1MHz
Current Gain-Bandwidth Product
f
T
- 130
−
MHz
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
Switching Times
t
on
−
42
−
ns
I
C
= 1A, V
CC
= 10V,
I
B1
= -I
B2
= 100mA
t
off
−
760 -
Notes:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%