Diodes ZTX855 - Manual (Page 2)

ZTX855
Document Number DS33136 Rev. 4 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX855
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
250 V
Collector-Emitter Voltage V
CEO
150 V
Emitter-Base Voltage V EBO
6 V
Continuous Collector Current I
C
4 A
Peak Pulse Current I
CM
10 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P D
1.58 W
Power Dissipation (Note 6) P
D
1.2 W
Thermal Resistance, Junction to Ambient (Note 5) R ΘJA 150 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R ΘJA 110 °C/W
Thermal Resistance, Junction to Lead (Note 7) R ΘJC 50 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +200
°C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM  4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM  400 V C
Notes: 5. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm x 25mm 1oz copper that is on a
single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board.
7. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.