Diodes ZTX855 - Manual (Page 4)

ZTX855
Document Number DS33136 Rev. 4 - 2
4 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX855
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
250 375 − V I
C
= 100µA
Collector-Emitter Breakdown Voltage BV
CER
250 375
−
V I
C
= 1µA,R
B
≤1kΩ
Collector-Emitter Breakdown Voltage (Note 9) BV CEO
150 180 − V I C = 1mA
Emitter-Base Breakdown Voltage BV
EBO
6 8 − V I
E
= 100µA
Collector-Base Cut-off Current I
CBO
− −
50
1
nA
µA V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
Collector-Emitter Cut-off Current
I
CER
R ≤ 1kΩ
− −
50
1
nA
µA
V CB = 200V
V
CB
= 200V, @T
A
= +100°C
Emitter-Base Cut-off Current I
EBO
− − 10 nA V
EB
= 6V
Collector-Emitter Saturation Voltage (Note 9) V CE(sat)
−
20
35
60
210
40
60
100
260
mV
I
C
= 100mA, I
B
= 5mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 4A, I
B
= 400mA
Base-Emitter Saturation Voltage (Note 9) V
BE(sat)
− 960 1100 mV I
C
= 4A, I
B
= 400mA
Base-Emitter Turn-On Voltage (Note 9) V
BE(on)
− 880 1000 mV I
C
= 4A, V
CE
= 5V
DC Current Gain (Note 9) h
FE
100
100
35
200
200
55
10
−
300
−
−
I C = 10mA, V CE = 5V
I
C
= 1A, V
CE
= 5V
I
C
= 4A, V
CE
= 5V
I
C
= 10A, V
CE
= 5V
Current Gain-Bandwidth Product (Note 9) f T
− 90 − MHz
V
CE
= 10V, I
C
= 100mA
f = 50MHz
Output Capacitance (Note 9) C
obo
− 22 − pF V
CB
= 20V, f = 1MHz
Switching Times
t
on
t off
−
66
2130
−
ns
ns I
C
= 1A, V
CC
= 50V
I B1 = -I B2 = 100mA
Notes: 9. Measured under pulsed conditions. Pulse width • 300µs. Duty cycle • 2%