Diodes ZXTN10150DZ - Manual (Page 4)

ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
4 of 7
www.diodes.com
November 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN10150DZ
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
150 300 - V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 5) BV
CEO
150 175 - V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 8.3 - V I
E
= 100µA
Collector Cut-off Current I
CBO
- - 50 nA V
CB
= 150V
Emitter Cut-off Current I EBO
- - 50 nA V EB = 7V
Static Forward Current Transfer Ratio (Note 5) h
FE
200
60
100
450
180
150 -
-
-
-
I
C
= 30mA, V
CE
= 5V
I
C
= 85mA, V
CE
= 0.20V
I
C
= 150mA, V
CE
= 0.25V
Base-Emitter Turn-On Voltage (Note 5) V BE(on)
- 0.701 0.95 V I
C = 150mA, V CE = 0.25V
Output Capacitance C
OBO
- 10 - pF V
CB
= 10V, f = 1MHz
Current Gain-Bandwidth Product f
t
- 135 - MHz
V
CB
= 10V, Ic = 10mA,
f = 100MHz
Delay Time t
(d)
- 625 - ns
V CC = 110V, I C = 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 0.25V
Rise Time t
(r)
- 562 - ns
Storage Time t
(s)
- 2465 - ns
Fall Time t (f)
- 289 - ns
Storage Time t
(s)
- 461 - ns V CC = 110V, I C = 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 4V Fall Time t
(f)
- 52 - ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%