Capacitance v voltage, Typical characteristics, Ty pic al g ain (h fe ) – Diodes ZXTN10150DZ User Manual
Page 5
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ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
5 of 7
November 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN10150DZ
Typical Characteristics
1m
10m
100m
1
10m
100m
1
1m
10m
100m
1
0.0
0.1
100µ
1m
10m
100m
1
0
100
200
300
400
500
1m
10m
100m
1
0.2
0.4
0.6
0.8
1.0
1m
10m
100m
1
0.2
0.4
0.6
0.8
1.0
1.2
100m
1
10
100
0
5
10
15
20
25
30
I
C
/I
B
=100
V
CE(sat)
v I
C
Tamb=25°C
I
C
/I
B
=20
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
(s
at
)
(
V
)
I
C
Collector Current (A)
100°C
V
BE(sat)
v I
C
I
C
/I
B
=20
125°C
25°C
-55°C
V
CE
(s
at
)
(
V
)
I
C
Collector Current (A)
125°C
h
FE
v I
C
V
CE
=0.25V
-55°C
25°C
85°C
I
C
Collector Current (A)
125°C
25°C
V
CE(sat)
v I
C
I
C
/I
B
=20
85°C
-55°C
V
BE
(s
at
)
(V
)
I
C
Collector Current (A)
125°C
V
BE(on)
v I
C
V
CE
=0.25V
85°C
25°C
-55°C
V
BE
(o
n)
(V
)
I
C
Collector Current (A)
Capacitance v Voltage
f = 1MHz
Cobo
Ca
pac
it
anc
e
(p
F
)
Voltage(V)
T
y
pic
al G
ain
(h
FE
)