Electrical characteristics at t, 25°c – Diodes ZXGD3101T8 User Manual
Page 3
ZXGD3101T8
.zetex.com
© Diodes Incorporated 2009
www.diodes.com
Electrical characteristics at T
A
= 25°C;
V
CC
= 10V; R
BIAS
= 1.8k
Ω; R
REF
=3k
Ω
(**) GATEH connected to GATEL
(*) R
H
= 100K
Ω, R
L
= 0/C
(†)
R
L
= 100K
Ω, R
H
= 0/C
(a) (Refer to Fig 4; Test circuit and Fig 5; Timing diagram on page 11
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input and supply characteristics
Operating current
I
OP
V
DRAIN
≤ -200m V
-
3
-
mA
V
DRAIN
≥ 0V
-
8
-
Gate Driver
Turn-off Threshold
Voltage
V
T
V
G
= 1V,
(*)
-45
-16
0
mV
GATE output voltage
(**)
V
G(off)
V
DRAIN
≥ 0V,
(*)
-
0.6
1
V
V
G
V
DRAIN
= -60mV,
(†)
5.0
7.5
-
V
DRAIN
= -80mV,
(†)
7.0
8.5
-
V
DRAIN
= -100mV,
(†)
8.4
9
-
V
DRAIN
≤ -140mV,
(†)
9.2
9.4
-
V
DRAIN
≤ -200mV,
(†)
9.3
9.5
-
GATEH peak source current
I
SOURCE
V
GH
= 1V
2.5
-
A
GATEL peak sink current
I
SINK
V
GL
= 5V
2.5
-
A
Turn on Propagation delay
t
d1
C
L
= 2.2nF,
(†)
(a)
525
ns
Turn off Propagation delay
t
d2
15
ns
Gate rise time
t
r
305
ns
Gate fall time
t
f
20
ns