Zhb6792, Npn transistors electrical characteristics (at t, 25°c) – Diodes ZHB6792 User Manual
Page 3
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ZHB6792
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT TEST CONDITIONS.
BreakdownVoltages V
(BR)CBO
70
V
I
C
=100
µ
A
V
(BR)CEO
70
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
µ
A
Cut-Off Currents
I
CBO
0.1
µ
A
V
CB
=55V
I
EBO
0.1
µ
A
V
EB
=4V
Saturation Voltages
V
CE(sat)
0.15
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=10mA*
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA,V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A,V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V, f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
12
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
46
1440
ns
ns
I
C
=500mA, I
B1
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
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