Zhb6792, Pnp transistors electrical characteristics (at t, 25°c) – Diodes ZHB6792 User Manual
Page 4
ZHB6792
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-75
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-70
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
µ
A
Collector Cut-Off Current
I
CBO
-0.1
µ
A
V
CB
=-40V
Emitter Cut-Off Current
I
EBO
-0.1
µ
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.45
-0.5
V
V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-25mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.95
V
I
C
=-1A, I
B
=-25mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer
h
FE
300
250
200
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
22
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
750
ns
ns
I
C
=-500mA,
I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%