Diodes ZXGD3102 User Manual
Page 3
Issue 4, May 2009
3
©Diodes Incorporated 2008
ZXGD3102T8
DC Electrical characteristics at T
A
= 25°C;
V
CC
= 10V; R
BIAS
= 3.3k
Ω; R
REF
=3.9k
Ω
Parameter
Symbol
Conditions Min.
Typ
Max.
Unit
Input and supply characteristics
Operating current
I
OP
V
D
≤ -100m V
-
2.4
-
mA
V
D
≥ 0V
-
5.2
-
Gate Driver
Turn-off Threshold Voltage(**)
V
T
V
G
= 1V, (*)
-50 -24 0 mV
GATE output voltage (**)
V
G(off)
V
D
≥ 0V, (*)
- 0.58 1
V
V
G
V
D
= -60mV, (
g)
4.1 7 -
V
D
= -80mV, (
g)
6.5 8.5 -
V
D
= -100mV, (
g)
8.0 9 -
V
D
= -140mV, (
g)
8.5 9.4 -
GATEH peak source current
I
SOURCE
V
GH
= 1V
2
-
A
GATEL peak sink current
I
SINK
V
GL
= 5V
5
-
-
A
DC Electrical Characteristics at T
A
= 25°C;
V
CC
= 10V; R
BIAS
= 3.9k
Ω; R
REF
=3.9k
Ω
Parameter
Symbol
Conditions Min.
Typ
Max.
Unit
Input and supply characteristics
Operating current
I
OP
V
D
≤ -100m V (g)
- 2.4 -
mA
V
D
≥ 0V (*)
- 4.8 -
Gate Driver
Turn-off Threshold Voltage(**)
V
T
V
G
= 1V, (*)
-55 -29 0 mV
GATE output voltage (**)
V
G(off)
V
D
≥ 0V, (*)
- 0.57 1
V
V
G
V
D
= -60mV, (
g)
3.5 6.5 -
V
D
= -80mV, (
g)
6.5 8.5 -
V
D
= -100mV, (
g)
8.0 8.8 -
V
D
= -140mV, (
g)
8.5 9.4 -
GATEH peak source current
I
SOURCE
V
GH
= 1V
2
-
A
GATEL peak sink current
I
SINK
V
GL
= 5V
5
-
-
A
Notes:
(**)
GATEH connected to GATEL
(*)
R
H
= 100k
Ω, R
L
= O/C; R
H
needed only for characterization purposes, not in the application
(
g) R
L
= 100k
Ω, R
H
= O/C; R
L
needed only for characterization purposes, not in the application