Diodes ZXTN04120HK - Manual (Page 2)

ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
2 of 7
www.diodes.com
January 2014
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A Product Line of
Diodes Incorporated
ZXTN04120HK
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
140 V
Collector-Emitter Voltage V
CEO
120 V
Emitter-Base Voltage V
EBO
14 V
Continuous Collector Current I
C
1.5 A
Peak Pulse Current I
CM
4 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
3.9
W (Note 6) 2
(Note 7) 1.5
Thermal Resistance, Junction to Ambient Air
(Note 5)
R
θJA
32
°C/W 
(Note 6) 62.5
(Note 7) 80
Thermal Resistance, Junction to Leads (Note 8) R
θJL
9
Thermal Resistance, Junction to Case (Note 9) R
θJC
11
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Thermal resistance from junction to the top of the case.
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.