Diodes ZXTN04120HK - Manual (Page 4)

ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
4 of 7
www.diodes.com
January 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN04120HK
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
140 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 11) BV
CEO
120 — — V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
14 — — V I
E
= 100µA
Collector-Base Cutoff Current I
CBO
— —
100
10
nA
µA V
CB
= 120V
V
CB
= 120V, T
A
= +120°C
Collector-Emitter Cutoff Current I
CES
— — 100 nA V
CE
= 120V
Emitter Cutoff Current I
EBO
— — 100 nA V
EB
= 8V
DC Current Gain (Note 11) h
FE
2,000
5,000
2,000
500
—
—
—
— —
—
100,000
—
—
I
C
= 50mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
Collector-Emitter Saturation Voltage (Note 11) V
CE(sat)
—
— —
— 1
1.5
V
I
C
= 250mA, I
B
= 0.25mA
I
C
= 1A, I
B
= 1mA
Base-Emitter Saturation Voltage (Note 11) V
BE(sat)
— — 1.8 V I
C
= 1A, I
B
= 1mA
Base-Emitter Turn-On Voltage (Note 11) V
BE(on)
— — 1.7 V I
C
= 1A, V
CE
= 5V
Input Capacitance (Note 11) C
ibo
— 90 — pF V
EB
= 0.5V, f = 1MHz
Output Capacitance (Note 11) C
obo
— 15 — pF V
CB
= 10V, f = 1MHz
Current Gain-Bandwidth Product (Note 11) f
T
150 — — MHz
V
CE
= 10V, I
C
= 100mA,
f=20MHz
Turn-On Time t
on
— 0.5 — µs V
CC
= 10V, I
C
= 500mA
I
B1
= -I
B2
= 0.5mA Turn-Off Time t
off
— 1.6 — µs
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.