Electrical characteristics, A product line of diodes incorporated – Diodes ZXTN04120HK User Manual

Page 4

Advertising
background image

ZXTN04120HK

Document number: DS36554 Rev. 3 - 2

4 of 7

www.diodes.com

January 2014

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXTN04120HK




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Collector-Base Breakdown Voltage

BV

CBO

140 — — V

I

C

= 100µA

Collector-Emitter Breakdown Voltage (Note 11)

BV

CEO

120 — — V

I

C

= 10mA

Emitter-Base Breakdown Voltage

BV

EBO

14 — — V

I

E

= 100µA

Collector-Base Cutoff Current

I

CBO

100

10

nA
µA

V

CB

= 120V

V

CB

= 120V, T

A

= +120°C

Collector-Emitter Cutoff Current

I

CES

— — 100 nA

V

CE

= 120V

Emitter Cutoff Current

I

EBO

— — 100 nA

V

EB

= 8V

DC Current Gain (Note 11)

h

FE

2,000
5,000
2,000

500




100,000

I

C

= 50mA, V

CE

= 5V

I

C

= 500mA, V

CE

= 5V

I

C

= 1A, V

CE

= 5V

I

C

= 2A, V

CE

= 5V

Collector-Emitter Saturation Voltage (Note 11)

V

CE(sat)



1

1.5

V

I

C

= 250mA, I

B

= 0.25mA

I

C

= 1A, I

B

= 1mA

Base-Emitter Saturation Voltage (Note 11)

V

BE(sat)

— — 1.8 V

I

C

= 1A, I

B

= 1mA

Base-Emitter Turn-On Voltage (Note 11)

V

BE(on)

— — 1.7 V

I

C

= 1A, V

CE

= 5V

Input Capacitance (Note 11)

C

ibo

— 90 — pF

V

EB

= 0.5V, f = 1MHz

Output Capacitance (Note 11)

C

obo

— 15 — pF

V

CB

= 10V, f = 1MHz

Current Gain-Bandwidth Product (Note 11)

f

T

150 — — MHz

V

CE

= 10V, I

C

= 100mA,

f=20MHz

Turn-On Time

t

on

— 0.5 — µs

V

CC

= 10V, I

C

= 500mA

I

B1

= -I

B2

= 0.5mA

Turn-Off Time

t

off

— 1.6 — µs

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.


Advertising