Diodes ZXMN2AMC - Manual (Page 4)

ZXMN2AMC
Document number: DS35089 Rev. 1 - 2
4 of 8
www.diodes.com
December 2010
© Diodes Incorporated
ZXMN2AMC
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
20 - - V I D = 250 μA, V
GS = 0V
Zero Gate Voltage Drain Current I
DSS
- - 1 μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
0.7 - 3.0 V I
D
= 250 μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10) R
DS (ON)
-
0.085 0.120
Ω
V
GS
= 4.5V, I
D
= 4A
0.140 0.300 V GS = 2.5V, I D = 1.5A
Forward Transconductance (Note 10 & 11) g
fs
- 6.2 - S V
DS
= 10V, I
D
= 4A
Diode Forward Voltage (Note 10) V
SD
- 0.9 0.95 V I
S
= 3.2A, V
GS
= 0V
Reverse Recover Time (Note 11) t
rr
- 23 - ns
I
S
= 4A, di/dt = 100A/µs
Reverse Recover Charge (Note 11) Q
rr
- 5.7 - nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C iss
- 299 - pF
V DS = 15V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 60 - pF
Reverse Transfer Capacitance C
rss
- 33 - pF
Total Gate Charge (Note 12) Q
g
- 0.8 - nC V GS
= 2.5V
V
DS
= 10V
I
D
= 4A
Total Gate Charge (Note 12) Q
g
- 3.1 - nC
V
GS
= 4.5V Gate-Source Charge (Note 12) Q
gs
- 0.7 - nC
Gate-Drain Charge (Note 12) Q
gd
- 1.0 - nC
Turn-On Delay Time (Note 12) t
D(on)
- 2.3 - ns
V DS = 10V, I D = 4A
V GS = 5V, R G = 6 Ω
Turn-On Rise Time (Note 12) t
r
- 2.6 - ns
Turn-Off Delay Time (Note 12) t
D(off)
- 1.6 - ns
Turn-Off Fall Time (Note 12) t f
- 1.3 - ns
Notes: 10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.