Diodes ZXMN3B04N8 - Manual (Page 4)

ZXMN3B04N8
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2004
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage V
(BR)DSS
30 V I
D
=250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
0.5 ␮A V
DS
=30V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
= Ϯ12V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
0.7 V I
D
=250 ␮A, V
DS
= V
GS
Static drain-source on-state
resistance (1)
R
DS(on)
0.021
0.028
0.025
0.040
⍀
⍀ V
GS
=4.5V, I
D
=7.2A
V
GS
=2.5V, I
D
=5.7A
Forward transconductance (1) (3) g
fs
24 S V
DS
=15V,I
D
=7.2A
DYNAMIC
(3)
Input capacitance C
iss
2480 pF
V
DS
=15V, V
GS
=0V,
f=1MHz
Output capacitance C
oss
318 pF
Reverse transfer capacitance C
rss
184 pF
SWITCHING
(2) (3)
Turn-on delay time t
d(on)
9 ns
V
DD
=15V, V
GS
=4.5V
I
D
=1A
R
G
≅6.0⍀,
Rise time t
r
11.5 ns
Turn-off delay time t
d(off)
40 ns
Fall time t
f
16.6 ns
Total gate charge Q
g
23.1 nC
V
DS
=15V,V
GS
=4.5V,
I
D
=7.2A
Gate-source charge Q
gs
4.9 nC
Gate-drain charge Q
gd
6.2 nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
0.85 0.95 V T
J
=25°C, I
S
=8A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
17.9 ns T
J
=25°C, I
F
=3.2A,
di/dt= 100A/ ␮s
Reverse recovery charge
(3)
Q
rr
10 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
Յ 300␮s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.