Diodes ZXMN3G32DN8 User Manual
Diodes Hardware
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Issue 1 - January 2008
1
www.zetex.com
© Zetex Semiconductors plc 2008
ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex features low on-
resistance and fast switching speed.
Features
•
Low on-resistance
•
4.5V gate drive capability
•
Fast switching bullet
Applications
•
DC-DC Converters
•
Power management functions
•
Motor Control
•
Backlighting
Ordering information
Device marking
ZXMN
3G32D
V
(BR)DSS
R
DS(on)
(
Ω)
I
D
(A)
30
0.028 @ V
GS
= 10V
7.1
0.045 @ V
GS
= 4.5V
5.6
DEVICE
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN3G32DN8TA
7
12
500
D2
S2
G2
D1
S1
G1
D1
S1
G1
S2
G2
D1
D2
D2
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