Zxmn3g32dn8, Absolute maximum ratings thermal resistance – Diodes ZXMN3G32DN8 User Manual
Page 2
ZXMN3G32DN8
Issue 1 - January 2008
2
www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300
µs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Parameter
Symbol
Limit
Unit
Drain source voltage
V
DSS
30
V
Gate source voltage
V
GS
±20
V
Continous Drain Current @ V
GS
=10; T
A
=25
°C
(b)
@ V
GS
=10; T
A
=70
°C
(b)
@ V
GS
=10; T
A
=25
°C
(a)
I
D
7.1
5.7
5.5
A
A
A
Pulsed drain current
(c)
I
DM
33.6
A
Continuous source current (body diode)
(b)
I
S
3.1
A
Pulsed source current (body diode)
(c)
I
SM
33.6
A
Power dissipation at T
A
=25
°C
(a)(d)
Linear derating factor
P
D
1.25
10
W
mW/
°C
Power dissipation at T
A
=25
°C
(a)(e)
Linear derating factor
P
D
1.8
14
W
mW/
°C
Power dissipation at T
A
=25
°C
(b)(d)
Linear derating factor
P
D
2.1
17
W
mW/
°C
Operating and storage temperature range
T
j
, T
stg
-55 to 150
°C
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)(d)
R
⍜JA
100
°C/W
Junction to ambient
(a)(e)
R
⍜JA
70
°C/W
Junction to ambient
(b)(d)
R
⍜JA
60
°C/W
Junction to lead
(f)
R
⍜JL
51
°C/W