A dv a n ce i nf o rm at ion zxmn6a08e6, Maximum ratings, Thermal characteristics – Diodes ZXMN6A08E6 User Manual

Page 2

Advertising
background image

ZXMN6A08E6

Document Number DS33376 Rev. 7 - 2

2 of 8

www.diodes.com

December 2013

© Diodes Incorporated

A

DV

A

N

CE

I

NF

O

RM

AT

ION

ZXMN6A08E6



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

60

V

Gate-Source Voltage

V

GS

±20

V

Continuous Drain Current

V

GS

= 10V

(Note 6)

I

D

3.5

A

T

A

= +70°C (Note 6)

2.8

(Note 5)

2.8

Pulsed Drain Current

V

GS

= 10V

(Note 7)

I

DM

16

A

Continuous Source Current (Body diode)

(Note 6)

I

S

2.6

A

Pulsed Source Current (Body diode)

(Note 7)

I

SM

16

A



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation
Linear Derating Factor

(Note 5)

P

D

1.1
8.8

W

mW/°C

(Note 6)

1.7

13.6

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

113

°C/W

(Note 6)

73

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes:

5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t

≤ 10 sec.

7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.



Advertising