Typical characteristics (cont.), Test circuits, Capac itanc e ( pf ) v – Diodes ZXMN6A08E6 User Manual

Page 6: Drain - source voltage (v), A dv a n ce i nf o rm at ion zxmn6a08e6, Typical characteristics, Gat e- s our ce v ol tage ( v )

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ZXMN6A08E6

Document Number DS33376 Rev. 7 - 2

6 of 8

www.diodes.com

December 2013

© Diodes Incorporated

A

DV

A

N

CE

I

NF

O

RM

AT

ION

ZXMN6A08E6



Typical Characteristics

(cont.)

1

10

0

200

400

600

C

RSS

C

OSS

C

ISS

V

GS

= 0V

f = 1MHz

C

C

apac

itanc

e (

pF

)

V

DS

- Drain - Source Voltage (V)

0

1

2

3

4

5

6

0

2

4

6

8

10

V

DS

= 15V

I

D

= 1.4A

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

V

GS

G

at

e-

S

our

ce V

ol

tage (

V

)

Test Circuits

Current

regulator

Charge

Gate charge test circuit

Sw itching time test circuit

Basic gate charge w aveform

Sw itching time w aveforms

D.U.T

50k

12V

Same as

D.U.T

V

GS

V

GS

V

DS

V

G

Q

GS

Q

GD

Q

G

V

GS

90%

10%

t

(on)

t

(on)

t

d(on)

t

r

t

r

t

V

DS

DD

V

R

D

R

G

V

DS

I

D

I

G

d(off)

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