Diodes ZXMN6A08E6 - Manual (Page 6)

ZXMN6A08E6
Document Number DS33376 Rev. 7 - 2
6 of 8
www.diodes.com
December 2013
© Diodes Incorporated
A
DV
A
N
CE
I
NF
O
RM
AT
ION
ZXMN6A08E6
Typical Characteristics
(cont.)
1 10
0
200
400
600
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C
C
apac
itanc
e (
pF
)
V
DS
- Drain - Source Voltage (V)
0 1 2 3 4 5 6
0
2
4
6
8
10
V
DS
= 15V
I
D
= 1.4A
Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage
Q - Charge (nC)
V
GS
G
at
e-
S
our
ce V
ol
tage (
V
)
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Sw itching time test circuit
Basic gate charge w aveform
Sw itching time w aveforms
D.U.T
50k 12V Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
V
DS
DD
V
R
D
R
G
V
DS
I
D
I
G
d(off)