Diodes ZXMN6A25DN8 User Manual

Diodes Hardware

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Issue 4 - November 2006

1

www.zetex.com

© Zetex Semiconductors plc 2006

ZXMN6A25DN8
Dual 60V SO8 N-channel enhancement mode MOSFET

Summary

Description

This new generation trench MOSFET from Zetex
features a unique structure combining the benefits of
low on-resistance and fast switching, making it ideal
for high efficiency power management applications.

Features

Low on-resistance

Fast switching speed

Low gate drive

Low profile SO8 package

Applications

DC - DC converters

Power management functions

Motor control

Ordering information

Device marking

ZXMN
6A25D

V

(BR)DSS

R

DS(on)

(

)

I

D

(A)

60

0.050 @ V

GS

= 10V

5

0.070 @ V

GS

= 4.5V

4.2

Device

Reel

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN6A25DN8TA

7

12

500

ZXMN6A25DN8TC

13

12

2500

D2

S2

G2

D1

S1

G1

D1

S1

G1

S2

G2

Pin out - top view

D1

D2

D2

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