Diodes ZXMN6A25DN8 - Manual (Page 4)

ZXMN6A25DN8
Issue 4 - November 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
60 V I
D
=250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1.0 mA V
DS
=60V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 V I
D
=250
␮A, V
DS
= V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Width=300
␮
s. Duty cycle
Յ
2% .
R
DS(on)
0.050
⍀
V
GS
=10V, I
D
=3.6A
0.070 ⍀ V
GS
=4.5V, I
D
=3A
Forward transconductance
(*)(‡) g
fs
10.2 S V
DS
=15V,I
D
=4.5A
Dynamic
(‡)
Input capacitance C
iss
1063 pF
V
DS
=30V,
V
GS
=0V,f=1MHz
Output capacitance C
oss
104 pF
Reverse transfer capacitance C
rss
64 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time t
d(on)
3.8 ns
V
DD
=30V, I
D
=1A
RG
≅6.0⍀, V
GS
=10V
Rise time t
r
4.0 ns
Turn-off delay time t
d(off)
26.2 ns
Fall Time t
f
10.6 ns
Gate charge Q
g
11.0 nC V
DS
=30V,V
GS
=5V,
I
D
=4.5A
Total gate charge Q
g
20.4 nC
V
DS
=30V,V
GS
=10V,
I
D
=4.5A Gate-source charge Q
gs
4.1 nC
Gate-drain charge Q
gd
5.1 nC
Source-drain diode
Diode Forward Voltage
(*) V
SD
0.85 0.95 V T
J
=25°C,
I
S
=5.5A,V
GS
=0V
Reverse recovery time
(‡) t
rr
22.0 ns
T
J
=25°C, I
F
=2.2A,
di/dt= 100A/
␮s
Reverse recovery charge
(‡) Q
rr
21.4 nC