Diodes ZXMN10A09K - Manual (Page 2)

ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
2 of 8
www.diodes.com
January 2010
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A Product Line of
Diodes Incorporated
ZXMN10A09K
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
100 V
Gate-Source voltage V
GS
±20 V
Continuous Drain current V
GS
= 10V
(Note 3)
T
A
= 70
°C (Note 3)
(Note 2)
I
D
7.7
6.2
5.0
A
Pulsed Drain current V GS = 10V (Note 4) I DM
27 A
Continuous Source current (Body diode) (Note 3) I
S
11 A
Pulsed Source current (Body diode) (Note 4) I
SM
27 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
4.31
34.4
W
mW/
°C
(Note 3)
10.1
80.8
(Note 6)
2.15
17.2
Thermal Resistance, Junction to Ambient
(Note 2)
R θJA
29
°C/W (Note 3) 12.3
(Note 6) 58
Thermal Resistance, Junction to Lead (Note 5) R θJL 1.14 °C/W
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t
≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.