Zxmn10a09k, Typical characteristics - continued, Capacitance v drain-source voltage – Diodes ZXMN10A09K User Manual
Page 6: Test circuits, C cap a ci ta nce (p f ) v, Drain - source voltage (v), Gate-source voltage v gate charge, Q - charge (nc), Ga te-s ou rce v o ltag e (v )
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ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
6 of 8
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A09K
Typical Characteristics - continued
0.1
1
10
100
0
500
1000
1500
2000
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C Cap
a
ci
ta
nce
(p
F
)
V
DS
- Drain - Source Voltage (V)
0
5
10
15
20
25
30
0
2
4
6
8
10
V
DS
= 50V
I
D
= 4.6A
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
V
GS
G
a
te-S
ou
rce V
o
ltag
e (V
)
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
12V
Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
V
DS
DD
V
R
D
R
G
V
DS
I
D
I
G
d(off)
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