Zxmn10a09k, Typical characteristics - continued, Capacitance v drain-source voltage – Diodes ZXMN10A09K User Manual

Page 6: Test circuits, C cap a ci ta nce (p f ) v, Drain - source voltage (v), Gate-source voltage v gate charge, Q - charge (nc), Ga te-s ou rce v o ltag e (v )

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ZXMN10A09K

Document Number DS32045 Rev. 7 - 2

6 of 8

www.diodes.com

January 2010

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXMN10A09K






Typical Characteristics - continued

0.1

1

10

100

0

500

1000

1500

2000

C

RSS

C

OSS

C

ISS

V

GS

= 0V

f = 1MHz

C Cap

a

ci

ta

nce

(p

F

)

V

DS

- Drain - Source Voltage (V)

0

5

10

15

20

25

30

0

2

4

6

8

10

V

DS

= 50V

I

D

= 4.6A

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

V

GS

G

a

te-S

ou

rce V

o

ltag

e (V

)

Test Circuits

Current

regulator

Charge

Gate charge test circuit

Switching time test circuit

Basic gate charge waveform

Switching time waveforms

D.U.T

50k

12V

Same as

D.U.T

V

GS

V

GS

V

DS

V

G

Q

GS

Q

GD

Q

G

V

GS

90%

10%

t

(on)

t

(on)

t

d(on)

t

r

t

r

t

V

DS

DD

V

R

D

R

G

V

DS

I

D

I

G

d(off)

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