Diodes ZXMN10A11K - Manual (Page 4)

ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
4 of 8
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11K
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
100 ⎯ ⎯ V I D = 250
μA, V
GS = 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 µA V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100
nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
2 ⎯ 4 V I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 7) R
DS (ON)
⎯ ⎯
0.350
Ω
V
GS
= 10V, I
D
= 2.6A
0.450 V GS = 6V, I D = 1.3A
Forward Transconductance (Notes 7 & 8) g
fs
⎯ 4 ⎯ S V
DS
= 15V, I
D
= 2.6A
Diode Forward Voltage (Note 7) V
SD
⎯ 0.850 0.950 V I
S
= 1.85A, V
GS
= 0V
Reverse recovery time (Note 8) t
rr
⎯ 26 ⎯ ns
I
S
= 1.0A, di/dt = 100A/
μs
Reverse recovery charge (Note 8) Q
rr
⎯ 30 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C iss
⎯ 274 ⎯ pF
V DS = 50V, V GS = 0V
f = 1MHz
Output Capacitance C
oss
⎯ 21 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 11 ⎯ pF
Total Gate Charge (Note 9) Q
g
⎯ 3.5 ⎯ nC V
GS
= 6V
V
DS
= 50V,
I
D
= 2.5A
Total Gate Charge (Note 9) Q
g
⎯ 5.4 ⎯ nC
V
GS
= 10V Gate-Source Charge (Note 9) Q
gs
⎯ 1.4 ⎯ nC
Gate-Drain Charge (Note 9) Q
gd
⎯ 1.5 ⎯ nC
Turn-On Delay Time (Note 9) t
D(on)
⎯ 2.7 ⎯ ns
V DD = 50V, V GS = 10V
I D = 1.0A, R G
≅ 6Ω
Turn-On Rise Time (Note 9) t
r
⎯ 1.7 ⎯ ns
Turn-Off Delay Time (Note 9) t
D(off)
⎯ 7.4 ⎯ ns
Turn-Off Fall Time (Note 9) t f
⎯ 3.5 ⎯ ns
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.