Zxmn10a11k, Typical characteristics - continued, Capacitance v drain-source voltage – Diodes ZXMN10A11K User Manual
Page 6: Test circuits, Capac it anc e (pf) v, Drain - source voltage (v), Gate-source voltage v gate charge, Q - charge (nc) v
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ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
6 of 8
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11K
Typical Characteristics - continued
1
10
100
0
100
200
300
400
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C
C
apac
it
anc
e (pF)
V
DS
- Drain - Source Voltage (V)
0
1
2
3
4
5
6
0
2
4
6
8
10
I
D
= 2.5A
V
DS
= 50V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
V
GS
Gate-
S
ou
rc
e V
o
ltag
e (V
)
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
12V
Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
V
DS
DD
V
R
D
R
G
V
DS
I
D
I
G
d(off)
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