Zxmp3a13f – Diodes ZXMP3A13F User Manual
Page 2
ZXMP3A13F
ISSUE 1 - MAY 2007
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R
θJA
200
°C/W
Junction to ambient (b)
R
θJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10
s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate Source Voltage
V
GS
20
V
Continuous Drain Current V
GS
=10V; T
A
=25°C (b)
V
GS
=10V; T
A
=70°C (b)
V
GS
=10V; T
A
=25°C (a)
I
D
-1.6
-1.3
-1.4
A
Pulsed Drain Current (c)
I
DM
-6
A
Continuous Source Current (Body Diode) (b)
I
S
-1.2
A
Pulsed Source Current (Body Diode) (c)
I
SM
-6
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS