Diodes ZXMP3A13F - Manual (Page 4)

ZXMP3A13F
ISSUE 1 - MAY 2007
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-30 V I
D
=-250 ␮A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-0.5 ␮A V
DS
=-30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
= Ϯ20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-1.0 V I
D
=-250 ␮A, V
DS
= V
GS
Static Drain-Source On-State Resistance (1) R
DS(on)
0.210
0.330 ⍀
⍀
V
GS
=-10V, I
D
=-1.4A
V
GS
=-4.5V, I
D
=-1.1A
Forward Transconductance (1)(3) g
fs
2.4 S V
DS
=-15V,I
D
=-1.4A
DYNAMIC (3)
Input Capacitance C
iss
206 pF
V
DS
=-15V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
59.3 pF
Reverse Transfer Capacitance C
rss
49.2 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
1.5 ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0 ⍀, V
GS
=-10V
Rise Time t
r
3.0 ns
Turn-Off Delay Time t
d(off)
11.1 ns
Fall Time t
f
7.6 ns
Gate Charge Q
g
3.8 nC V
DS
=-15V,V
GS
=-5V,
I
D
=-1.4A
Total Gate Charge Q
g
6.4 nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-1.4A
Gate-Source Charge Q
gs
0.69 nC
Gate-Drain Charge Q
gd
2.0 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
-0.85 -0.95 V T
J
=25°C, I
S
=-1.1A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
15.6 ns T
J
=25°C, I
F
=-0.95A,
di/dt= 100A/ μs
Reverse Recovery Charge (3) Q
rr
9.6 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width
=300μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.