Diodes ZXMP3A16G - Manual (Page 4)

ZXMP3A16G
Document Number DS33575 Rev. 5 - 2
4 of 8
www.diodes.com
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP3A16G
ADVAN
CE I
N
F
O
RM
ATI
O
N Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-30 ⎯ ⎯ V I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0 ⎯ ⎯ V I
D
= -250 μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 6) R
DS (ON)
⎯ ⎯
45
m Ω
V GS = -10V, I D = -4.2A
70 V
GS
= -4.5V, I
D
= -3.4A
Forward Transconductance (Notes 6 & 7) g
fs
⎯ 9.2 ⎯ S V
DS
= -15V, I
D
= -4.2A
Diode Forward Voltage (Note 6) V
SD
⎯ -0.85 -0.95 V I
S
= -3.6A, V
GS
= 0V, T
J
= 25°C
Reverse recovery time (Note 7) t
rr
21.7 ⎯ ns I
F
= -2A, di/dt = 100A/ μs,
T
J
= 25°C Reverse recovery charge (Note 7) Q
rr
⎯ 16.1 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯ 1022 ⎯ pF
V
DS
= -15V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 267 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 229 ⎯ pF
Total Gate Charge (Note 8) Q
g
⎯ 17.2 ⎯ nC V
GS
= -5V
V DS = -15V
I
D
= -4.2A
Total Gate Charge (Note 8) Q
g
⎯ 29.6 ⎯ nC
V
GS
= -10V Gate-Source Charge (Note 8) Q
gs
⎯ 2.8 ⎯ nC
Gate-Drain Charge (Note 8) Q gd
⎯ 8.6 ⎯ nC
Turn-On Delay Time (Note 8) t
D(on)
⎯ 3.8 ⎯ ns
V
DD
= -15V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 8) t
r
⎯ 6.5 ⎯ ns
Turn-Off Delay Time (Note 8) t D(off)
⎯ 37.1 ⎯ ns
Turn-Off Fall Time (Note 8) t
f
⎯ 21.4 ⎯ ns
Notes: 6. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.