Diodes ZXM64P03X - Manual (Page 2)

ZXM64P03X
Document Number DS33487 Rev. 2 - 2
2 of 7
www.diodes.com
October 2012
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A Product Line of
Diodes Incorporated
ZXM64P03X
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current V GS = 4.5V
T
A
= +25°C (Note 5)
T A = +70°C (Note 5)
I D
-3.8
-3.0
A
Pulsed Drain Current (Note 7) I
DM
-1.9 A
Continuous Source Current (Body Diode) (Note 6) I
S
-2.3 A
Pulsed Source Current (Body Diode) (Note 7) I
SM
-19 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear Derating Factor
P
D
1.1
8.8 W
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor
P
D
1.8
14.4
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) R θJA 113 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R θJA 70 °C/W
Thermal Resistance, Junction to Ambient (Note 8) R θJL 39.8 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤10 secs.
7. Repetitive rating pulse width limited by pulse current limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the Drain lead).
Thermal Characteristics