Diodes ZXM64P03X - Manual (Page 3)

ZXM64P03X
Document Number DS33487 Rev. 2 - 2
3 of 7
www.diodes.com
October 2012
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A Product Line of
Diodes Incorporated
ZXM64P03X
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-30 ⎯ ⎯ V I
D
= -250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ -1 μA
V DS = -30V, V GS = 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0 ⎯ ⎯ V I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS (ON)
⎯ ⎯
75
m Ω
V
GS
= -10V, I
D
= -2.4A
100 V
GS
= -4.5V, I
D
= -1.2A
Forward Transconductance (Notes 9 and 11) g fs
2.3 ⎯ ⎯ S V DS = -10V, I D = -1.2A
Diode Forward Voltage (Note 9) V
SD
⎯ ⎯ -0.95 V T
J
= +25°C, I
S
= -2.4A, V
GS
= 0V
Reverse Recovery Time (Note 11) t
rr
⎯ 30.2 ⎯ ns T
J
= +25°C, I
F
= -2.4A,
di/dt = 100A/
μs
Reverse Recovery Charge (Note 11) Q rr
⎯ 27.8 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
⎯ 825 ⎯
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C oss
⎯ 250 ⎯
Reverse Transfer Capacitance C
rss
⎯ 80 ⎯
Turn-On Delay Time (Note 10) t
d(on)
⎯ 4.4 ⎯
ns
V
DD
= -15V, I
D
= -2.4A,
R
G
= 6.2 Ω, R
D
= 6.2 Ω
(Refer to test circuit)
Turn-On Rise Time (Note 10) t r
⎯ 6.2 ⎯
Turn-Off Delay Time (Note 10) t
d(off)
⎯ 40 ⎯
Turn-Off Fall Time (Note 10) t
f
⎯ 29.2 ⎯
Total Gate Charge (Note 10) Q
g
⎯ ⎯ 46
nC
V DS = -24V, V GS = -10V,
I D = -2.4A
(Refer to test circuit)
Gate-Source Charge (Note 10) Q
gs
⎯ ⎯ 9
Gate-Drain Charge (Note 10) Q
gd
⎯ ⎯ 11.5
Notes: 9. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.