Zxmp3f30fh new prod uc t, Electrical characteristics, Zxmp3f30fh – Diodes ZXMP3F30FH User Manual

Page 3

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ZXMP3F30FH

Document number: DS33579 Rev. 2 - 2

3 of 7

www.diodes.com

February 2014

© Diodes Incorporated

ZXMP3F30FH

NEW PROD

UC

T


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage

BV

DSS

-30

V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current

I

DSS

-1 nA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100

nA

V

GS

=

±20V, V

DS

= 0V

ON CHARACTERISTICS
Gate Threshold Voltage

V

GS(th)

-1

-3 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance (Note 9)

R

DS (ON)

80

140

mΩ

V

GS

= -10V, I

D

= -2.5A

V

GS

= -4.5V, I

D

= -1.9A

Forward Transconductance (Note 9 & 10)

g

fs

5

S

V

DS

= -15V, I

D

= -3A

Diode Forward Voltage (Note 9)

V

SD

-0.8 -1.2 V

V

GS

= 0V, I

S

= -1.7A

DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance

C

iss

370

pF

V

DS

= -15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

72

pF

Reverse Transfer Capacitance

C

rss

38

pF

GATE CHARACTERISTICS
Total Gate Charge

Qg

7

nC

V

DS

= -15V, V

GS

= -10V,

I

D

= -3A

Gate-Source Charge

Q

gs

1.2

Gate-Drain Charge

Q

gd

1.3

SWITCHING CHARACTERISTICS (Note 10 & 11)
Turn-On Delay Time

t

d(on)

1.3

ns

V

DS

= -15V, V

GS

= -10V,

I

D

= -1A, R

G

= 6.0Ω

Rise Time

t

r

2.6

Turn-On Delay Time

t

d(off)

49

Rise Time

t

f

22

SOURCE-DRAIN DIODE CHARACTERISTICS (Note 11)
Reverse Recovery Time

t

rr

14.6

ns

IS= -1.5A,di/dt=100A/μs

Reverse Recovery Charge

Q

rr

9.5

nC

Notes:

5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. Mounted on FR4 PCB measured at t

≤10 sec.

7. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300

μs – pulse width limited by maximum junction temperature.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.


































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