Diodes ZXMP6A17E6Q - Manual (Page 2)

ZXMP6A17E6Q
Document Number: DS36685 Rev. 1 - 5
2 of 8
www.diodes.com
January 2014
© Diodes Incorporated
ZXMP6A17E6Q
A
D
V
A
N
C
E
I
N
F
O
R
M
A
T
IO
N
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
-60 V
Gate-Source voltage V
GS
 20 V
Continuous Drain current V
GS
= 10V
(Note 7)
I
D
-3.0
A T
A
= +70°C (Note 7) -2.4
(Note 6) -2.3
Pulsed Drain current V
GS
= 10V (Note 8) I
DM
-13.6 A
Continuous Source current (Body diode) (Note 7) I
S
-2.5 A
Pulsed Source current (Body diode) (Note 8) I SM
-13.6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 6)
P
D
1.1
8.8
W
mW/  C
(Note 7)
1.92
15.4
Thermal Resistance, Junction to Ambient
(Note 6)
R θJA
113
 C/W
(Note 7) 65
Operating and storage temperature range T J , T STG
-55 to +150 
C
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t
 5 sec.
8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.