Diodes ZXMP6A17E6Q - Manual (Page 4)

ZXMP6A17E6Q
Document Number: DS36685 Rev. 1 - 5
4 of 8
www.diodes.com
January 2014
© Diodes Incorporated
ZXMP6A17E6Q
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Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60   V I
D
= -250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  -1.0 
A V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  
100 nA V
GS
=  20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0  -3.0 V I
D
= -250 μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS (ON)

0.100 0.125
Ω
V
GS
= -10V, I
D
= -2.3A
0.130 0.190 V GS = -4.5V, I D = -1.9A
Forward Transconductance (Notes 9 & 10) g
fs
 4.7  S V
DS
= -15V, I
D
= -2.3A
Diode Forward Voltage (Note 9) V
SD
 -0.85 -0.95 V I
S
= -2.0A, V
GS
= 0V
Reverse recovery time (Note 10) t
rr
 25.1  ns
I
F
= -1.7A, di/dt = 100A/ μs
Reverse recovery charge (Note 10) Q
rr
 27.2  nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C iss
 637  pF
V DS = -30V, V GS = 0V
f = 1.0MHz
Output Capacitance C
oss
 70  pF
Reverse Transfer Capacitance C
rss
 53  pF
Total Gate Charge (Note 11) Q
g
 9.8  nC V
GS
= -5.0V
V
DS
= -30V
I
D
= -2.3A
Total Gate Charge (Note 11) Q
g
 17.7  nC
V
GS
= -10V Gate-Source Charge (Note 11) Q
gs
 1.6  nC
Gate-Drain Charge (Note 11) Q
gd
 4.4  nC
Turn-On Delay Time (Note 11) t D(on)
 2.6  ns
V DD = -30V, V GS = -10V
I D = -1.0A, R G

6.0 Ω
Turn-On Rise Time (Note 11) t
r
 3.4  ns
Turn-Off Delay Time (Note 11) t
D(off)
 26.2  ns
Turn-Off Fall Time (Note 11) t f
 11.3  ns
Notes: 9. Measured under pulsed conditions. Pulse width  300 μs; duty cycle  2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.