Diodes ZXMP6A18K - Manual (Page 4)

ZXMP6A18K
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
A
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
-60 V I
D
=-250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
-1.0 µA V
DS
=-60V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-1.0 V I
D
=-250 ␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Width
Յ
300µs. Duty cycle
Յ
2%.
R
DS(on)
0.055 ⍀ V
GS
=-10V, I
D
=-3.5A
0.080 V
GS
=-4.5V, I
D
=-2.9A
Forward transconductance
(*)(‡) gfs 8.7 S V
DS
=-15V,I
D
=-3.5A
Dynamic
(‡)
Input capacitance C
iss
1580 pF
V
DS
=-30 V, V
GS
=0V,
f=1MHz
Output capacitance C
oss
160 pF
Reverse transfer capacitance C
rss
140 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time t
d(on)
4.6 ns
V
DD
=-30V, I
D
=-1A
R
G
=6.0W,V
GS
=-10V
Rise time t
r
5.8 ns
Turn-off delay time t
d(off)
55 ns
Fall time t
f
23 ns
Gate charge Q
g
23 nC V
DS
=-30V,V
GS
=-5V,
I
D
=-3.5A
Total gate charge Q
g
44 nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-3.5A
Gate-source charge Q
gs
3.9 nC
Gate-drain charge Q
gd
9.8 nC
Source-drain diode
Diode forward voltage
(*) V
SD
-0.85 -0.95 V T
J
=25°C, I
S
=-4.2A,
V
GS
=0V
Reverse recovery time
(‡) t
rr
37 ns
T
J
=25°C, I
F
=-2.1A,
di/dt= 100A/µs
Reverse recovery charge
(‡) Q rr
56 nC