Diodes ZXMC3A18DN8 - Manual (Page 2)

ZXMC3A18DN8
Issue 2 - September 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300
␮
s, d<= 0.02. Refer to
transient thermal impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
Parameter Symbol N-channel P-channel Unit
Drain-source voltage V
DSS
30 -30 V
Gate-source voltage V
GS
±20 ±20 V
Continuous drain current (V
GS
= 10V; T
amb
=25°C) (b)(d) I
D
7.6 -6.3 A
(V
GS
= 10V; T
amb
=70°C) (b)(d) 6.1 -5.0
(V
GS
= 10V; T
amb
=25°C) (a)(d) 5.8 -4.8
Pulsed drain current (c) I
DM
37 -30 A
Continuous source current (body diode) (b) I
S
3.6 3.2 A
Pulsed source current (body diode) (c) I
SM
37 30 A
Power dissipation at T
amb
=25°C (a)(d) P
D
1.25 W
Linear derating factor 10 mW/°C
Power dissipation at T
amb
=25°C (a)(e) P
D
1.8 W
Linear derating factor 14 mW/°C
Power dissipation at T
amb
=25°C (b)(d) P
D
2.1 W
Linear derating factor 17 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient (a)(d) R
⍜JA
100 °C/W
Junction to ambient (a)(e) R ⍜JA 70 °C/W
Junction to ambient (b)(d) R
⍜JA
60 °C/W