Diodes ZXMC3A18DN8 - Manual (Page 4)

ZXMC3A18DN8
Issue 2 - September 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
N-channel
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
30 V I
D
= 250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
0.5
␮A V
DS
=30V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 V I
D
= 250 ␮A, V
DS
=V
GS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
R
DS(on)
0.025
⍀
V
GS
= 10V, I
D
= 5.8A
0.030 V
GS
= 4.5V, I
D
= 5.3A
Forward transconductance (*)(‡) g
fs
17.5 S V
DS
= 15V, I
D
= 5.8A
Dynamic (‡)
Input capacitance C
iss
1800 pF V
DS
= 25V, V
GS
=0V
f=1MHz
Output capacitance C
oss
289 pF
Reverse transfer capacitance C
rss
178 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
5.5 ns V
DD
= 15V, I
D
= 6A
R
G
≅ 6.0⍀, V
GS
= 10V
Rise time t
r
8.7 ns
Turn-off delay time t
d(off)
33 ns
Fall time t
f
8.5 ns
Gate charge Q
g
19.4 nC V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Total gate charge Q
g
36 nC V
DS
= 15V, V
GS
= 10V
I
D
= 3.5A
Gate-source charge Q
gs
5.5 nC
Gate drain charge Q
gd
7.0 nC
Source-drain diode
Diode forward voltage (*) V
SD
0.95 V T
j
=25°C, I
S
= 6A, V
GS
=0V
Reverse recovery time (‡) t
rr
20.5 ns T
j
=25°C, I
S
= 6A,
di/dt=100A/
␮s
Reverse recovery charge (‡) Q
rr
41.5 nC