Diodes ZXMC3AMC - Manual (Page 2)

ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
2 of 11
www.diodes.com
December 2010
© Diodes Incorporated
ZXMC3AMC
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol N-channel – Q1 P-channel – Q2 Unit
Drain-Source Voltage V
DSS
30 -30
V
Gate-Source Voltage V GSS
±20 ±20
Continuous Drain Current V
GS = 10V
(Notes 4 & 7)
I
D
3.7 -2.7
A
T
A
= 70°C (Notes 4 & 7) 3.0 -2.2
(Notes 3 & 7) 2.9 -2.1
Pulsed Drain Current V
GS = 10V (Notes 6 & 7) I
DM
13 -9.2
Continuous Source Current (Body diode) (Notes 4 & 7) I S
3.2 -2.8
Pulse Source Current (Body diode) (Notes 6 & 7) I
SM
13 -9.2
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol N-channel – Q1 P-channel – Q2 Unit
Power Dissipation
Linear Derating Factor
(Notes 3 & 7)
P
D
1.50
12
W
mW/°C
(Notes 4 & 7)
2.45
19.6
(Notes 5 & 7)
1.13
9
(Notes 5 & 8)
1.70
13.6
Thermal Resistance, Junction to Ambient
(Notes 3 & 7)
R θJA
83.3
°C/W
(Notes 4 & 7) 51.0
(Notes 5 & 7) 111
(Notes 5 & 8) 73.5
Thermal Resistance, Junction to Lead (Notes 7 & 9) R θJL 17.1
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Notes: 3. For a device surface mounted on 28mm x 28mm (8cm 2 ) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.
4. Same as note (3) except the device is measured at t < 5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
2 ) FR4 PCB with high coverage of single sided 1oz copper.
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).