Zxmc3amc, Thermal characteristics, N-channel safe operating area – Diodes ZXMC3AMC User Manual
Page 3: Derating curve, Transient thermal impedance, Thermal resistance v board area, Power dissipation v board area, P-channel safe operating area
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
3 of 11
December 2010
© Diodes Incorporated
ZXMC3AMC
A Product Line of
Diodes Incorporated
Thermal Characteristics
1
10
10m
100m
1
10
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
100µ
1m
10m 100m
1
10
100
1k
0
20
40
60
80
90
0.1
1
10
100
0
25
50
75
100
125
150
175
200
225
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
10
10m
100m
1
10
8 sq cm 2oz Cu
One active die
100us
100ms
1s
R
DS(ON)
Limited
1ms
N-channel Safe Operating Area
Single Pulse, T
amb
=25°C
DC
10ms
I
D
Dr
ain C
u
rr
ent
(A
)
V
DS
Drain-Source Voltage (V)
8 sq cm 2oz Cu
One active die
Single Pulse, T
amb
=25°C
10 sq cm 1oz Cu
One active die
8 sq cm 2oz Cu
One active die
10 sq cm 1oz Cu
Two active die
Derating Curve
M
a
x
P
o
we
r D
is
s
ip
at
ion
(W)
Temperature (°C)
8 sq cm 2oz Cu
One active die
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Ther
m
al
R
es
ist
a
nce
(
°C
/W
)
Pulse Width (s)
1oz Cu
Two active die
1oz Cu
One active die
2oz Cu
One active die
2oz Cu
Two active die
Thermal Resistance v Board Area
Ther
m
al
R
es
is
tanc
e (
°C
/W
)
Board Cu Area (sqcm)
2oz Cu
Two active die
1oz Cu
Two active die
1oz Cu
One active die
2oz Cu
Two active die
2oz Cu
One active die
Power Dissipation v Board Area
T
amb
=25°C
T
j max
=150°C
Continuous
P
D
Dis
s
ipat
ion
(W
)
Board Cu Area (sqcm)
DC 1s
100ms
10ms
1ms
100us
R
DS(ON)
Limited
P-channel Safe Operating Area
-V
DS
Drain-Source Voltage (V)
-I
D
Drai
n Current
(A
)