Electrical characteristics, Zxms6004ff – Diodes ZXMS6004FF User Manual

Page 4

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ZXMS6004FF

Document number: DS33609 Rev. 5 - 2

4 of 8

www.diodes.com

March 2014

© Diodes Incorporated

ZXMS6004FF

IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Static Characteristics
Drain-Source Clamp Voltage

V

DS(AZ)

60 65 70 V

I

D

= 10mA

Off State Drain Current

I

DSS

— — 500 nA

V

DS

= 12V, V

IN

= 0V

— — 1 µA

V

DS

= 36V, V

IN

= 0V

Input Threshold Voltage

V

IN(th)

0.7 1 1.5 V

V

DS

= V

GS

, I

D

= 1mA

Input Current

I

IN

60 100

μA

V

IN

= +3V

120 200

V

IN

= +5V

Input Current While Over Temperature Active

— — — 220

μA

V

IN

= +5V

Static Drain-Source On-State Resistance

R

DS(on)

400 600

mΩ

V

IN

= +3V, I

D

= 0.5A

350 500

V

IN

= +5V, I

D

= 0.5A

Continuous Drain Current (Note 5)

I

D

0.9

— —

A

V

IN

= 3V; T

A

= +25°C

1.0

— —

V

IN

= 5V; T

A

= +25°C

Continuous Drain Current (Note 6)

1.2

— —

V

IN

= 3V; T

A

= +25°C

1.3

— —

V

IN

= 5V; T

A

= +25°C

Current Limit (Note 8)

I

D(LIM)

0.7 1.7 —

A

V

IN

= +3V

1 2.2 —

V

IN

= +5V

Dynamic Characteristics
Turn On Delay Time

t

d(on)

5

μs

V

DD

= 12V, I

D

= 0.5A, V

GS

= 5V

Rise Time

t

r

10

Turn Off Delay Time

t

d(off)

45

Fall Time

f

f

15

Over-Temperature Protection
Thermal Overload Trip Temperature (Note 9)

T

JT

+150 +175

C

Thermal Hysteresis (Note 9)

f

f

— +10 —

C

Notes: 8. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods..




































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