Diodes ZXMS6006SG - Manual (Page 4)

ZXMS6006SG
Document number: DS35141 Rev. 2 - 2
4 of 9
www.diodes.com
November 2011
© Diodes Incorporated
ZXMS6006SG
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Recommended Operating Conditions
The ZXMS6006SG is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic Symbol Min Max Unit
Input voltage range V
IN
0 5.5 V
Ambient temperature range T
A
-40 125 °C
High Level Input Voltage for MOSFET to be on V
IH
3 5.5 V
Low Level Input Voltage for MOSFET to be off V
IL
0 0.7 V
Peripheral Supply Voltage (voltage to which load is referred) V P
0 16 V
Thermal Characteristics
1 10
10m
100m
1
10
15X15X1.6 mm
Single 1oz FR4
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
I D
Drai
n
Curre
nt
(A
)
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
50X50X1.6 mm
Single 2oz FR4
15X15X1.6 mm
Single 1oz FR4
Derating Curve
Temperature (°C)
M
a
x P
o
wer Di
ssi
p
a
ti
on
(
W
)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120 15X15X1.6 mm
Single 1oz FR4
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
herm
a
l Resi
st
an
ce (°
C/
W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
15X15X1.6 mm
Single 1oz FR4
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Ma
x
imu
m Po
w
e
r (
W
)