Diodes ZXMHC3A01T8 - Manual (Page 4)

ZXMHC3A01T8
S E M I C O N D U C T O R S
DRAFT ISSUE E - APRIL 2004
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage V
(BR)DSS
30 V I
D
= 250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1.0 ␮A V
DS
=30V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 3.0 V I
D
= 250 ␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(1)
R
DS(on)
0.12
0.18
⍀
⍀ V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2.0A
Forward transconductance
(1) (3)
g
fs
3.5 S V
DS
=4.5V, I
D
= 2.5A
DYNAMIC (3)
Input capacitance C
iss
190 pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output capacitance C
oss
38 pF
Reverse transfer capacitance C
rss
20 pF
SWITCHING (2) (3)
Turn-on-delay time t
d(on)
1.7 ns
V
DD
= 15V, I
D
= 2.5A
R
G
≅ 6.0Ω, V
GS
= 10V
Rise time t
r
2.3 ns
Turn-off delay time t
d(off)
6.6 ns
Fall time t
f
2.9 ns
Total gate charge Q
g
3.9 nC
V
DS
= 15V, V
GS
= 10V
I
D
= 2.5A
Gate-source charge Q
gs
0.6 nC
Gate drain charge Q
gd
0.9 nC
SOURCE-DRAIN DIODE
Diode forward voltage (1) V
SD
0.95 V T
j
=25°C, I
S
= 1.7A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
17.7 ns T
j
=25°C, I
S
= 2.5A,
di/dt=100A/ ␮s Reverse recovery charge
(3)
Q
rr
13.0 nC
N-channel
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.